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SemiWell Semiconductor Bi-Directional Triode Thyristor
Symbol
STP6A60
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 6 A ) High Commutation dv/dt Non-isolated Type TO-220
2.T2

3.Gate
1.T1
General Description
This device is suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.
1 2 3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25C unless otherwise specified ) Condition Ratings
600 TC = 100 C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 6.0 60/66 18 3.0 0.3 2.0 10 - 40 ~ 125 - 40 ~ 150 2.0
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass
Units
V A A A2 s W W A V C C g
Aug, 2003. Rev. 3
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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STP6A60
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -3.0 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Gate Trigger Current VD = 6 V, RL=10
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 8 A, Inst. Measurement
Ratings Min.
0.2 5.0
Typ.
10
Max.
1.0 1.5 20 20 20 1.5 1.5 1.5 2.8
Unit
IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c)
mA V
mA
V
V
V/
mA C/W
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STP6A60
Fig 1. Gate Characteristics
10
2
Fig 2. On-State Voltage
10
1
VGM (10V)
On-State Current [A]
Gate Voltage [V]
PGM (3W) PG(AV) (0.3W) 25 IGM (2A)
10
0
10
1
125 C
o
25 C
10
0
o
10
-1
VGD (0.2V)
1
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
10 9
Fig 4. On State Current vs. Allowable Case Temperature
Allowable Case Temperature [ oC]
130
Power Dissipation [W]
8 7 6 5 4 3 2 1 0 0 1

360
2
= 180 o = 150 o = 120 = 90 = 60 = 30
o o o
o
120
: Conduction Angle
110

100
360
2

= 30 o = 60 o = 90 o = 120 o = 150 o = 180
o
: Conduction Angle
90
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
80 70
10
Fig 6. Gate Trigger Voltage vs. Junction Temperature
Surge On-State Current [A]
60
60Hz
VGT (25 C) VGT (t C)
50 40 30 20 10 0 0 10
0.1 -50
o o
V
1
_ GT3
50Hz
V V
+ GT1 _ GT1
10
1
10
2
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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STP6A60
Fig 7. Gate Trigger Current vs. Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
I I
+ GT1 _ GT1
Transient Thermal Impedance [ C/W]
IGT (25 C)
IGT (t C)
o
o
o
I
0.1 -50
_ GT3
1
0
50
100
o
150
10
-2
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10

6V
A

RG
6V
A

RG
6V
A
V
V
V
RG
Test Procedure
Test Procedure
Test Procedure
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STP6A60
TO-220 Package Dimension
Dim. A B C D E F G H I J K L M N O
Min. 9.7 6.3 9.0 12.8 1.2
mm Typ.
Max. 10.1 6.7 9.47 13.3 1.4
Min. 0.382 0.248 0.354 0.504 0.047
Inch Typ.
Max. 0.398 0.264 0.373 0.524 0.055
1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024
0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142
E B
A
H
I
F
C M
G 1 D 2 3
L
1. T1 2. T2 3. Gate
N O
J K
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